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escg4 programme


  • George Dimitrakopulos Aristotle University of Thessaloniki, (Greece)
    "Defect and strain engineering in epitaxial semiconductors: Insights from topological analysis and quantitative electron microscopy"

  • Thierry Duffar SIMaPGrenoble, (France)
    "Numerical simulation to help crystal growth research and production"

  • Christiane Frank-RotschLeibniz Institute for Crystal Growth, Berlin, (Germany) 
    "Semiconductor bulk crystal growth  by vertical gradient freeze (VGF) method"

  • Zbigniew GałązkaLeibniz Institute for Crystal Growth, Berlin, (Germany)
    "Bulk Crystal Growth and Physical Properties of Transparent Semiconducting Oxides"

  • Eleftherios Iliopoulos, University of Crete, Heraklion, (Greece)
    "III-Nitrides Molecular Beam Epitaxy: Fundamentals, Kinetics and Applications"

  • Lutz Kirste, Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, (Germany)
     "X-ray Diffraction Metrology of Semiconductor Substrates and Epitaxial Thin Films for Device Fabrication"

  • Nicola LovergineUniversity of Salento, Leece, (Italy)
    "Vapor Phase Epitaxy of Semiconductors"

  • Grzegorz Muzioł, Institute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland )
    "Novel concepts in optoelectronic devices based on GaN"

  • Dorota Pawlak, Ensemble3, (Poland)
    Title of presentation TBA

  • Ghazala SadiqThe Cambridge Crystallographic Data Centre, Cambridge, (United Kingdom)
    "Insights from small molecules - a structural informatics workflow to assess solid form"

  • Tomasz SochackiInstitute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland)
    "The Power of GaN: Crystallization for Tomorrow's Needs"

  • Paweł StrakInstitute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland)
    "Abinitio modelling of surfaces, crystal growth and defects"

  • Filip Tuomisto, University of Helsinki, (Finland )
    "Positron annihilation spectroscopy: characterizing vacancy defects in crystals"


Organized by: